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NDF11N50Z
THERMAL RESISTANCE
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State (Note 3)
Symbol
R q JC
R q JA
NDF11N50Z
3.2
50
Unit
° C/W
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
BV DSS
D BV DSS /
D T J
500
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
V DS = 500 V, V GS = 0 V
V GS = ± 20 V
25 ° C
125 ° C
I DSS
I GSS
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 4)
Static Drain ? to ? Source
On ? Resistance
V GS = 10 V, I D = 4.5 A
R DS(on)
0.48
0.52
W
Gate Threshold Voltage
Forward Transconductance
V DS = V GS , I D = 100 m A
V DS = 15 V, I D = 4.5 A
V GS(th)
g FS
3.0
3.9
7.7
4.5
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
C iss
1097
1375
1645
pF
Output Capacitance (Note 5)
Reverse Transfer Capacitance
(Note 5)
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
C oss
C rss
132
30
166
40
199
50
Total Gate Charge (Note 5)
Q g
23
46
69
nC
Gate ? to ? Source Charge (Note 5)
Gate ? to ? Drain (“Miller”) Charge
(Note 5)
Plateau Voltage
Gate Resistance
V DD = 250 V, I D = 10.5 A,
V GS = 10 V
Q gs
Q gd
V GP
R g
4.5
12.5
8.7
25
6.2
1.4
13
37.5
V
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
15
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = 250 V, I D = 10.5 A,
V GS = 10 V, R G = 5 Ω
t r
t d(off)
t f
32
40
23
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S = 10.5 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 10.5 A, di/dt = 100 A/ m s
V SD
t rr
Q rr
310
2.5
1.6
V
ns
m C
3. Insertion mounted
4. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
5. Guaranteed by design.
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